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| HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171. Features * 27A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG12N60B3 PACKAGE TO-247 BRAND G12N60B3 NOTE: When ordering, use the entire part number. Symbol C COLLECTOR (BOTTOM SIDE METAL) G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 27 12 110 20 30 96A at 600V 104 0.83 100 -55 to 150 300 260 5 10 W W/oC mJ oC oC oC UNITS V A A A V V s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = -10mA, VGE = 0V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 20 4.5 96 TYP 1.6 1.7 4.9 7.3 51 68 26 23 150 62 150 304 250 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 UNITS V V A mA V V V nA A V nC nC ns ns ns ns J J J Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 12A VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP Qg(ON) IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 25, VGE = 15V L = 100H, VCE = 600V IC = 12A, VCE = 0.5 BVCES IC = 12A VCE = 300V VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC ICE = 12A VCE = 480V VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 17) (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3) Thermal Resistance Junction To Case NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 12A VCE = 480V VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 17) MIN TYP 22 23 280 112 165 500 660 MAX 295 175 525 800 1.2 UNITS ns ns ns ns J J J oC/W Typical Performance Curves 30 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 25 20 15 10 5 0 25 100 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 25, VGE = 15V, L = 100H 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Typical Performance Curves 300 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) 16 14 fMAX , OPERATING FREQUENCY (kHz) TC 75oC 75oC 110oC 110oC VGE 15V 10V 15V 10V VCE = 360V, RG = 25, TJ = 125oC ISC 100 90 80 70 60 50 tSC 40 30 100 12 10 8 6 4 2 10 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 1.2oC/W, SEE NOTES 1 2 3 10 20 30 11 12 13 14 15 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 70 TC = -55oC 60 50 40 30 20 10 0 TC = 25oC DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s TC = 150oC ICE , COLLECTOR TO EMITTER CURRENT (A) 180 DUTY CYCLE <0.5%, VGE = 15V 160 PULSE DURATION = 250s 140 120 100 80 60 40 20 0 0 2 4 TC = -55oC TC = 150oC TC = 25oC 0 2 4 6 8 10 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 EON , TURN-ON ENERGY LOSS (mJ) FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2.5 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 25, L = 1mH, VCE = 480V 2.5 TJ = 25oC, TJ = 150oC, VGE = 10V 2.0 1.5 1.0 0.5 0 5 10 15 TJ = 25oC, TJ = 150oC, VGE = 15V 20 25 30 RG = 25, L = 1mH, VCE = 480V 2.0 1.5 TJ = 150oC; VGE = 10V OR 15V 1.0 0.5 TJ = 25oC; VGE = 10V OR 15V 0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 ISC , PEAK SHORT CIRCUIT CURRENT (A) TJ = 150oC, RG = 25, L = 1mH, V CE = 480V HGTG12N60B3 Typical Performance Curves 55 RG = 25, L = 1mH, VCE = 480V tdI , TURN-ON DELAY TIME (ns) 50 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 15V trI , RISE TIME (ns) Unless Otherwise Specified (Continued) 150 RG = 25, L = 1mH, VCE = 480V 125 T = 25oC, T = 150oC, V J J GE = 10V 100 75 50 25 TJ = 25oC and TJ = 150oC, VGE = 15V 5 10 15 20 25 30 0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 140 RG = 25, L = 1mH, VCE = 480V 300 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 25, L = 1mH, VCE = 480V 275 tfI , FALL TIME (ns) 130 120 110 100 90 80 70 60 5 10 15 20 25 30 TJ = 25oC, VGE = 10V OR 15V TJ = 150oC, VGE = 10V, VGE = 15V 250 225 200 TJ = 25oC, VGE = 10V, VGE = 15V 175 150 125 100 5 10 15 20 25 30 TJ = 150oC, VGE = 10V, VGE = 15V ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <0.5%, VCE = 10V 160 PULSE DURATION = 250s TC = 25oC 140 120 100 80 60 40 20 0 4 5 6 7 8 9 10 11 12 TC = -55oC VGE, GATE TO EMITTER VOLTAGE (V) 180 15 Ig (REF) = 1mA, RL = 25, TC = 25oC 12 VCE = 600V 9 TC = 150oC 6 VCE = 400V VCE = 200V 3 0 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 0 5 10 15 20 25 30 35 40 45 50 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORM (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Typical Performance Curves Unless Otherwise Specified (Continued) 2.50 FREQUENCY = 1MHz 2.00 C, CAPACITANCE (nF) CIES 1.50 1.00 COES 0.50 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = PD x ZJC x RJC + TC 10-1 100 PD t2 101 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE HGTG12N60B3D 90% VGE L = 1mH RG = 25 + VCE 90% ICE 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - VDD = 480V FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 |
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